power transistors 1 publication date: september 2003 sjd00214bed 2SD1742, 2SD1742a silicon npn triple diffusion planar type for low-frequency power amplification complementary to 2sb1172 and 2sb1172a features ? high forward current transfer ratio h fe which has satisfactory linearity ? low collector-emitter saturation voltage v ce(sat) ? i type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment absolute maximum ratings t c = 25 c electrical characteristics t c = 25 c 3 c 7.0 0.3 3.5 0.2 0? to 0.15? 12.6 0.3 7.2 0.3 2.5 0.2 2.5 0.2 (1.0) (1.0) 1.0 0.2 3.0 0.2 2.0 0.2 1.1 0.1 0.75 0.1 0.9 0.1 0? to 0.15? 0.4 0.1 2.3 0.2 4.6 0.4 123 unit: mm 1: base 2: collector 3: emitter i-g1 package note) 1. measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. 2. * : rank classification note) self-supported type package is also prepared. rank q p h fe1 70 to 150 120 to 250 parameter symbol rating unit collector-base voltage 2SD1742 v cbo 60 v (emitter open) 2SD1742a 80 collector-emitter voltage 2SD1742 v ceo 60 v (base open) 2SD1742a 80 emitter-base voltage (collector open) v ebo 6v collector current i c 3a peak collector current i cp 5a collector power dissipation p c 15 w t a = 25 c 1.3 junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c parameter symbol conditions min typ max unit collector-emitter voltage 2SD1742 v ceo i c = 30 ma, i b = 060v (base open) 2SD1742a 80 base-emitter voltage v be v ce = 4 v, i c = 3 a 1.8 v collector-emitter cutoff 2sb1742 i ces v ce = 60 v, v be = 0 200 a current (e-b short) 2sb1742a v ce = 80 v, v be = 0 200 collector-base cutoff 2sb1742 i cbo v cb = 30 v, i e = 0 300 a current (emitter open) 2sb1742a v cb = 60 v, i e = 0 300 emitter-base cutoff current (collector open) i ebo v eb = 6 v, i c = 01ma forward current transfer ratio h fe1 * v ce = 4 v, i c = 1 a 70 250 ? h fe2 v ce = 4 v, i c = 3 a 10 collector-emitter saturation voltage v ce(sat) i c = 3 a, i b = 0.375 a 1.2 v transition frequency f t v ce = 10 v, i c = 0.5 a, f = 10 mhz 30 mhz turn-on time t on i c = 1 a, i b1 = 0.1 a, i b2 = ? 0.1 a 0.5 s storage time t stg v cc = 50 v 2.5 s fall time t f 0.4 s
2SD1742, 2SD1742a 2 sjd00214bed v ce(sat) ? i c h fe ? i c f t ? i c p c ? t a i c ? v ce i c ? v be safe operation area r th ? t 0 0 160 40 120 80 5 15 10 20 collector power dissipation p c (w) ambient temperature t a ( c) (1)t c =ta (2)without heat sink (p c =1.3w) (1) (2) 012 210 48 6 0 1 2 3 5 4 collector current i c (a) collector-emitter voltage v ce (v) t c =25?c i b =100ma 90ma 80ma 70ma 60ma 40ma 30ma 20ma 10ma 50ma 02.4 0.4 2.0 0.8 1.6 1.2 0 8 6 4 2 base-emitter voltage v be (v) collector current i c (a) t c =100?c 25?c ?5?c v ce =4v 0.01 0.01 0.1 1 10 100 0.1 1 10 collector-emitter saturation voltage v ce(sat) (v) collector current i c (a) i c /i b =8 t c =100?c 25?c ?5?c 0.01 0.1 1 10 1 10 10 2 10 3 10 4 forward current transfer ratio h fe collector current i c (a) v ce =4v t c =100?c 25?c ?5?c 0.01 0.1 1 10 1 10 10 2 10 3 10 4 collector current i c (a) transition frequency f t (mhz) v ce =5v f=10mhz t c =25?c 0.01 1 0.1 1 10 100 10 100 1 000 collector current i c (a) collector-emitter voltage v ce (v) non repetitive pulse t c =25?c i cp i c t=10ms t=300ms t=1ms 2SD1742 2SD1742a (1)without heat sink (2)with a 50 50 2mm al heat sink (1) (2) 10 ? 1 1 10 10 2 10 3 10 3 10 4 10 2 10 1 10 ? 1 10 ? 3 10 ? 2 10 ? 4 time t (s) thermal resistance r th ( c/w)
request for your special attention and precautions in using the technical information and semiconductors described in this material (1) an export permit needs to be obtained from the competent authorities of the japanese government if any of the products or technologies described in this material and controlled under the "foreign exchange and foreign trade law" is to be exported or taken out of japan. (2) the technical information described in this material is limited to showing representative characteris- tics and applied circuits examples of the products. it neither warrants non-infringement of intellec- tual property right or any other rights owned by our company or a third party, nor grants any license. (3) we are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) the products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instru- ments and household appliances). consult our sales staff in advance for information on the following applications: ? special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. ? any applications other than the standard applications intended. (5) the products and product specifications described in this material are subject to change without notice for modification and/or improvement. at the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date product standards in advance to make sure that the latest specifications satisfy your requirements. (6) when designing your equipment, comply with the guaranteed values, in particular those of maxi- mum rating, the range of operating power supply voltage, and heat radiation characteristics. other- wise, we will not be liable for any defect which may arise later in your equipment. even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) when using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) this material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of matsushita electric industrial co., ltd. 2002 jul
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